Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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Effective Measurement and modeling of memory effects in Power Amplifier

RF 전력 증폭기 메모리 효과의 효율적인 측정과 모델링 기법

  • 김원호 (성균관대학교 정보통신공학부) ;
  • 황보훈 (성균관대학교 정보통신공학부) ;
  • 나완수 (성균관대학교 정보통신공학부) ;
  • 박천석 (성균관대학교 정보통신공학부) ;
  • 김병성 (성균관대학교 정보통신공학부)
  • Published : 2004.11.12
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Abstract

In this paper, we identify the memory effect of high power(125W) laterally diffused metal oxide-semiconductor(LDMOS) RF Power Amplifier(PA) by two tone IMD measurement. We measure two tone IMD by changing the tone spacing and the power level. Different asymmetric IMD is founded at different center frequency measurements. We propose the Tapped Delay Line-Neural Network(TDNN) technique as the modeling method of LDMOS PA based on two tone IMD data. TDNN's modeling accuracy is highly reasonable compared to the memoryless adaptive modeling method.

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