$A1_2O_3-SiO_2$ Dielectric Films from Metal Alkoxides

The preparation of A1203-SiO2 thin films from less than one micron to several tens of microns in thickness had been Prepared from metal alkoxide sols. Two methods, dip-withdrawal and electrophoretic deposition, were employed for thin films and sheets formation. The requirements to be satisfied by the solution for preparing uniform and strong films and by the factors affecting thickness and other properties of the films were examined. For the preparation of thin, continuous A12O3-SiO2 films, therefore, metal-organic-derived precursor solutions contained Si and Al in a chemically polymerized form has been developed and produced in a clear liquid state.