An In-Situ Optical Study on Silicon Crystallization Process Using an Excimer Laser

Excimer Laser응용 실리콘 결정화 공정에 대한 In-Situ 광학적 연구

  • 김우진 (홍익대학교 대학원 기계공학과) ;
  • 윤창환 (홍익대학교 대학원 기계공학과) ;
  • 박승호 (홍익대학교 기계시스템디자인공학과) ;
  • 김형준 (홍익대학교 신소재공학과)
  • Published : 2003.04.23

Abstract

Due to the heat confinement in the shallow region of the target for a short time scale, pulsed laser annealing has received increasing interest for the fabrication of poly-Si thin film transistors(TFTs) on glass as a low cost substrate in the flat panel displays. The formation and growth mechanisms of poly silicon(poly-Si) grains in thin films are investigated using an excimer laser crystallization system. To understand the crystallization mechanism, the grain formations are observed by FESEM analysis. The optical reflectance and transmittance during the crystallization process are measured using HeNe laser optics. A two-step ELC(Excimer Laser Crystallization) process is applied to enhance the grain formation uniformity.

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