대한기계학회:학술대회논문집 (Proceedings of the KSME Conference)
- 대한기계학회 2003년도 춘계학술대회
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- Pages.1296-1301
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- 2003
Self-Conditioning을 이용한 고정입자패드의 텅스텐 CMP
Tungsten CMP using Fixed Abrasive Pad with Self-Conditioning
초록
The chemical mechanical polishing(CMP) is necessarily applied to manufacturing the dielectric layer and metal line in the semiconductor device. The conditioning of polishing pad in CMP process additionally operates for maintaining the removal rate, within wafer non-uniformity, and wafer to wafer non-uniformity. But the fixed abrasive pad(FAP) using the hydrophilic polymer with abrasive that has the swelling characteristic by water owns the self-conditioning advantage as compared with the general CMP. FAP also takes advantage of planarity, resulting from decreasing pattern selectivity and defects such as dishing due to the reduction of abrasive concentration. This paper introduces the manufacturing technique of FAP. And the tungsten CMP using FAP achieved the good conclusion in point of the removal rate, non-uniformity, surface roughness, material selectivity, micro-scratch free contemporary with the pad life-time.
키워드