Proceedings of the KSME Conference (대한기계학회:학술대회논문집)
- 2003.11a
- /
- Pages.1816-1821
- /
- 2003
Zeta-potential in CMP process of sapphire wafer on poly-urethane pad
폴리우레탄 패드를 이용한 기계-화학 연마공정에서 파이어 웨이퍼 표면 전위
- Published : 2003.11.05
Abstract
The sapphire wafer for blue light emitting device was manufactured by the implementation of the chemical and mechanical polishing process. The surface polishing of crystalline sapphire wafer was characterized by zeta potential measurement. The reduction process with the alkali slurry provides the surface chemical reaction with sapphire atoms. The poly-urethane pad also provides the frictional force to take out the chemically-reacted surface layers. The surface roughness was measured by the atomic force microscope and the crystalline quality was characterized by the double crystal X -ray diffraction analysis.