Proceedings of the KSME Conference (대한기계학회:학술대회논문집)
- 2003.11a
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- Pages.73-78
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- 2003
Onset on the Rate Limiting Factors of InP Film Deposition in Horizontal MOCVD Reactor
수평형 MOCVD 반응기 내의 InP 필름성장 제어인자에 대한 영향 평가
- Im, Ik-Tae ;
- Sugiyama, Masakazu (Dept. of Electronic Eng., Univ.) ;
- Nakano, Yoshiyaki (Dept. of Electronic Eng., Univ.) ;
- Shimogaki, Yukihiro (Dept. of Materials Eng., Univ.)
- 임익태 (익산대학 자동차과) ;
- ;
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- Published : 2003.11.05
Abstract
The InP thin films grown by metalorganic chemical vapor deposition (MOCVD) are widely used to optoelectronic devices such as laser diodes, wave-guides and optical modulators. Effects of various parameters controlling film growth rate such as gas-phase reaction rate constant, surface reaction rate constant and mass diffusivity are numerically investigated. Results show that at the upstream region where film growth rate increases with the flow direction, diffusion including thermal diffusion plays an important role. At the downstream region where the growth rate decreases with flow direction, film deposition mechanism is revealed as a mass-transport limited. Mass transport characteristics are also studied using systematic analyses.
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