대한기계학회:학술대회논문집 (Proceedings of the KSME Conference)
- 대한기계학회 2003년도 추계학술대회
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- Pages.67-72
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- 2003
MOCVD 반응로내 GaN 성장에 미치는 입구형상의 영향
Effect of inlet configuration on the growth rate of GaN layer in a MOCVD reactor
초록
Numerical calculation has been performed to investigate the effect of inlet configuration on the growth rate of GaN layer on the heated susceptor. The conventional single inlet, where the gas is mixed by force in the inlet, is compared with separated flow inlet. Two-parallel gas flow