Prediction of plasma etching using genetic-algorithm controlled backpropagation neural network

A new technique is presented to construct a predictive model of plasma etch process. This was accomplished by combining a backpropagation neural network (BPNN) and a genetic algorithm (GA). The predictive model constructed in this way is referred to as a GA-BPNN. The GA played a role of controlling training factors simultaneously. The training factors to be optimized are the hidden neuron, training tolerance, initial weight magnitude, and two gradients of bipolar sigmoid and linear functions. Each etch response was optimized separately. The proposed scheme was evaluated with a set of experimental plasma etch data. The etch process was characterized by a $2^3$ full factorial experiment. The etch responses modeled are aluminum (A1) etch rate, silica profile angle, A1 selectivity, and dc bias. Additional test data were prepared to evaluate model appropriateness. The GA-BPNN was compared to a conventional BPNN. Compared to the BPNN, the GA-BPNN demonstrated an improvement of more than 20% for all etch responses. The improvement was significant in the case of A1 etch rate.