한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2003년도 제5회 학술대회 논문집 일렉트렛트 및 응용기술연구회
- /
- Pages.61-64
- /
- 2003
Bi 박막의 성막 특성에 관한 연구
Study on the deposition Characteristics of Bi Thin Film
- Yang, Dong-Bok (Dongshin Uni.) ;
- Park, Yong-Pil (Dongshin Uni.) ;
- Lee, Hee-Kab (KCCI)
- 발행 : 2003.05.30
초록
This paper presents Bi thin films have been fabricated by atomic layer-by-layer deposition and co-deposition at an IBS method. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. Mg(100) was used as a substrate. In order to appreciate stable existing region of Bi 2212 phase with temperature and ozone pressure, the substrate temperature was varied between 655 and