한국정보디스플레이학회:학술대회논문집
- 2003.07a
- /
- Pages.981-983
- /
- 2003
High voltage MOSFET fabricated by using a standard CMOS logic process to drive the top emission OLEDs in silicon-based OELDs
- Lee, Cheon-An (Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University) ;
- Kwon, Hyuck-In (Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University) ;
- Jin, Sung-Hun (Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University) ;
- Lee, Chang-Ju (Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University) ;
- Lee, Myung-Won (Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University) ;
- Kyung, Jae-Woo (Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University) ;
- Cho, Il-Whan (Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University) ;
- Lee, Jong-Duk (Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University) ;
- Park, Byung-Gook (Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University)
- Published : 2003.07.09
Abstract
Using the conventional standard CMOS logic process, the high voltage MOSFET to drive top emission OLEDs was fabricated for the silicon-based organic electroluminescent display. The drift region of the conventional high voltage MOSFET was implemented by the n-well of the logic process. The measurement result shows a good saturation characteristic up to 50 V without breakdown phenomena.
Keywords