한국정보디스플레이학회:학술대회논문집
- 2003.07a
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- Pages.907-909
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- 2003
Field assisted dopant activation of ion shower doped Poly-Si
- Kim, Eun-Seok (Dep't of Mat. Sci. and Eng., Hongik University) ;
- Kim, Dae-Sup (Dep't of Mat. Sci. and Eng., Hongik University) ;
- Ryu, Seung-Wook (Dep't of Mat. Sci. and Eng., Hongik University) ;
- Ro, Jae-Sang (Dep't of Mat. Sci. and Eng., Hongik University) ;
- Choi, Kyu-Hwan (Samsung SDI CO., LTD.) ;
- Lee, Ki-Yong (Samsung SDI CO., LTD.)
- Published : 2003.07.09
Abstract
We report a novel method of activation-annealing, named as induction annealing (IA). IA is realized by applying alternating electric field induced by alternatingmagnetic filed applied to the sample. We observed the enhanced kinetics of dopant activation by using IA.
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