한국정보디스플레이학회:학술대회논문집
- 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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- Pages.675-678
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- 2003
The electrical characteristics of pentacene field-effect transistors with polymer gate insulators
- Kang, Gi-Wook (Department of Physics, Inha University) ;
- Kang, Hee-Young (Department of Physics, Inha University) ;
- Park, Kyung-Min (Department of Physics, Inha University) ;
- Song, Jun-Ho (Department of Physics, Inha University) ;
- Lee, Chang-Hee (Department of Physics, Inha University)
- 발행 : 2003.07.09
초록
We studied the electrical characteristics of pentacene-based organic field-effect transistors (FETs) with polymethyl methacrylate (PMMA) or poly-4-vinylphenol (PVP) as the gate insulator. PMMA or PVP was spin-coated on the indium tin oxide glass substrate that serves as gate electrodes. The source-drain current dependence on the gate voltage shows the FET characteristics of the hole accumulation type. The transistor with PVP shows a higher field-effect mobility of 0.14
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