한국정보디스플레이학회:학술대회논문집
- 2003.07a
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- Pages.634-638
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- 2003
The Study of a-Si Film Crystallization using an XeCl Laser Annealing on the Plastic Substrate
- Kim, Do-Young (New materials Lab.(BK21 lab.) School of Information and Computer Engineering, Sungkyunkwan University) ;
- Suh, Chang-Ki (New materials Lab.(BK21 lab.) School of Information and Computer Engineering, Sungkyunkwan University) ;
- Shim, Myung-Suk (New materials Lab.(BK21 lab.) School of Information and Computer Engineering, Sungkyunkwan University) ;
- Kim, Chi-Hyung (New materials Lab.(BK21 lab.) School of Information and Computer Engineering, Sungkyunkwan University) ;
- Yi, Jun-Sin (New materials Lab.(BK21 lab.) School of Information and Computer Engineering, Sungkyunkwan University) ;
- Lee, Min-Chul (School of Electrical Engineering, Seoul National University) ;
- Han, Min-Gu (School of Electrical Engineering, Seoul National University)
- Published : 2003.07.09
Abstract
We reported the a-Si crystallization using a XeCl excimer laser annealing on the plastic substrate. The poly-Si film is able to grow in the low temperature and light substrate like a plastic. For the preparation of sample, substrate is cleaned by organic liquids. The film of
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