한국정보디스플레이학회:학술대회논문집
- 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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- Pages.630-633
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- 2003
Parametric Study for Excimer Laser-induced Crystallization in the a-Si thin film
- Moon, Min-Hyung (Display Device Center, Samsung Electronics Co.) ;
- Kim, Hyun-Jae (Display Device Center, Samsung Electronics Co.) ;
- Choi, Kwang-Soo (Display Device Center, Samsung Electronics Co.) ;
- Souk, Jun-Hyung (Display Device Center, Samsung Electronics Co.) ;
- Seo, Chang-Ki (School of Information and Communication Engineering, Sungkyunkwan University) ;
- Kim, Do-Young (School of Information and Communication Engineering, Sungkyunkwan University) ;
- Dhungel, Suresh Kumar (School of Information and Communication Engineering, Sungkyunkwan University) ;
- Yi, Junsin (School of Information and Communication Engineering, Sungkyunkwan University)
- 발행 : 2003.07.09
초록
Integrating the driver circuitry directly onto the glass substrate would be one of the advantages of polycrystalline Si (poly-Si) TFT-(LCD). Low-temperature poly-Si TFT(LTPS) is well-suited for higher-definition display applications due to its intrinsically superior electrical characteristics. In order to improve LTPS electrical characteristics, currently the excimer laser-induced crystallization (ELC) processes and sequential lateral solidification method were developed. Grain size of the poly-Si is mainly affected by beam pitch and energy density. Key parameter for making a larger poly-Si using excimer laser annealing(ELA) and increasing a throughput is due to increase in beam pitch and energy density to a certain degree. Furthermore, thin
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