한국정보디스플레이학회:학술대회논문집
- 2003.07a
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- Pages.581-584
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- 2003
Simulation of Domain Growth in Antiferroelctric Liquid Crystal Display
- Jhun, Chul-Gyu (Department of Electronics Engineering, Pusan National University) ;
- Ann, Sun-Mo (Department of Electronics Engineering, Pusan National University) ;
- Moon, Sung-O (Department of Electronics Engineering, Pusan National University) ;
- Lee, Gi-Dong (Department of Electronics Engineering, Pusan National University) ;
- Yoon, Tae-Hoon (Department of Electronics Engineering, Pusan National University, Research Institute of Computer, Information and Communication, Pusan National University) ;
- Kim, Jae-Chang (Department of Electronics Engineering, Pusan National University, Research Institute of Computer, Information and Communication, Pusan National University)
- Published : 2003.07.09
Abstract
Most modeling about dynamic behavior of Antiferroelectric Liquid Crystal (AFLC) is limited to the hysteric characteristics of AFLC cells or thresholdless switching of frustrated AFLC cells. In this paper, domain growth of AFLC cells is modeled with extended bilayer model. When driving pulses that consist of a selection voltage, a bias voltage, and a reset voltage are applied to the AFLC cell, its dynamic behavior is simulated.
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