한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

AsGeSeS/Ag 박막에서 Ag의 두께에 따른 홀로그래픽 회절 효율 특성

The characteristics of holographic diffraction efficiency depend on thickness of Ag in AsGeSeS/Ag thin film

  • 이정태 (광운대학교 전자재료공학과) ;
  • 이기남 (광운대학교 전자재료공학과) ;
  • 여철호 (광운대학교 전자재료공학과) ;
  • 이영종 (여주대학교 전자과) ;
  • 정흉배 (광운대학교 전자재료공학과)
  • Lee, Jung-Tae (Department of Electronic Materials Eng. Kwangwoon Unuv.) ;
  • Lee, Ki-Nam (Department of Electronic Materials Eng. Kwangwoon Unuv.) ;
  • Yeo, Cheol-Ho (Department of Electronic Materials Eng. Kwangwoon Unuv.) ;
  • Lee, Yeong-Jong (Department of Electronic Eng. Yeojoo Univ.) ;
  • Chung, Hong-Bay (Department of Electronic Materials Eng. Kwangwoon Unuv.)
  • 발행 : 2003.11.13
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초록

We have carried out two-beam interference experiment to form holographic grating on amorphous $As_{40}Ge_{10}Se_{15}S_{35}/Ag$ double-layer. In this study holographic grating formed using He-Ne laser(632.8nm) under non-polarization state and p-polarization state and we confirm that the diffraction efficiency depend on thickness of Ag. The diffraction efficiency was obtained by first order intensity. We got the maximum diffraction efficiency that thickness of Ag was $600{\AA}$. The maximum diffraction efficiency was 13.5% in (P:P) polarization state.

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