한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

칼코게나이드 박막에서의 파장에 따른 회절효율 특성

chalcogenide thin films of diffraction efficiency characteristic according to the wavelength

  • 이기남 (광운대학교 전자재료공학과) ;
  • 여철호 (광운대학교 전자재료공학과) ;
  • 신경 (광운대학교 전자재료공학과) ;
  • 정홍배 (광운대학교 전자재료공학과)
  • 발행 : 2003.11.13
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초록

In this thesis, We observed the characteristic of the diffraction efficiency according to the wave length of the chalcogenide thin films. The used an $Ag(200{\AA})/As_{40}Ge_{10}Se_{15}S_{35}$ thin film. We made grating formation by each wave length 325nm, 442nm, 632.8nm. After measure diffraction efficiency of the time. We expressed the maxium saturation value at fast time as were the short wavelength and stable characteristic. On the other hand we appeard to the by a maxium diffraction efficiency the 1.7% in 325nm, 0.8% in 442nm, 0.27% in 632.8nm. The maximum diffraction efficiency expressed high value as were the long wavelength.

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