한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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- Pages.259-262
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- 2003
ICP 식각 시스템에 의한 YBCO 초전도 박막의 식각두께 변화에 따른 특성 분석
Analysis of Characteristics with Etching Thickness of YBCO Superconducting Thin Films By ICP system
- 고석철 (전북대학교 전기공학과) ;
- 강형곤 (전북대 반도체물성연구소) ;
- 현종옥 (전북대학교 전기공학과) ;
- 최명호 (광주보건대 의료정보공학과) ;
- 한병성 (전북대학교부설공학연구원 공업기술연구센터) ;
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한윤봉
(전북대학교 화학공학과)
- Ko, Seok-Cheol (Chonbuk National Uni.) ;
- Kang, Hyeong-Gon (Chonbuk National Uni., Semi. Physics Research Center) ;
- Hyun, Ong-Ok (Chonbuk National Uni.) ;
- Choi, Myoung-Ho (Kwangju Health College) ;
- Han, Byoung-Sung (The Research Center of Industrial Technology Eng. Research Institute Chonbuk National Uni.) ;
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Hahn, Yoon-Bong
(School of Chemical Eng. and Tech. Chonbuk National Uni.)
- 발행 : 2003.11.13
초록
Superconducting flux flow transistor(SFFT) is based on a control of the Abrikosov vortex flowing along a channel. The induced voltage by moving of the Abrikosov vortex in SFFT is greatly affected by the thickness and width, of channel. In order to fabricate a reproducibility channel in SFFT, we have researched the variation of the critical characteristics of YBCO thin films with the etching time using ICP(Inductively coupled plasma) system. It was certified that the velocity of vortex decreased with increasing the width of channel and was saturated faster in low bias from a simulation. An etching mechanism of YBCO thin films by ICP system was also certified by AFM(Atomic Force Microscope) and by measuring the critical current density with etching time. As measurement result, we could analyze that we should optimize the etching thickness of channel part to construct a flux flow transistor with desired characteristics.