Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2003.11a
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- Pages.188-191
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- 2003
Global planarization Characteristic of $WO_3$ CMP
$WO_3$ CMP의 광역평탄화 특성
- Published : 2003.11.13
Abstract
Chemical mechanical polishing (CMP) process has been widely used to planarize dielectric layers, which can be applied to the integrated circuits for sub-micron technology. Despite the increased use of CMP process, it is difficult to accomplish the global planarization of in the defect-free inter-level dielectrics (ILD). we investigated the performance of