한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

SOI 응용을 위한 반도체-원자 초격자 구조의 특성

Characteristics of Semiconductor-Atomic Superlattice for SOI Applications

  • 서용진 (대불대학교 전기공학과) ;
  • 박성우 (대불대학교 전기공학과) ;
  • 이경진 (대불대학교 전기공학과) ;
  • 김기욱 (대불대학교 전기공학과) ;
  • 박창준 (대불대학교 전기공학과)
  • Seo, Yong-Jin (Department of Electrical Engineering, DAEBUL University) ;
  • Park, Sung-Woo (Department of Electrical Engineering, DAEBUL University) ;
  • Lee, Kyoung-Jin (Department of Electrical Engineering, DAEBUL University) ;
  • Kim, Gi-Uk (Department of Electrical Engineering, DAEBUL University) ;
  • Park, Chang-Jun (Department of Electrical Engineering, DAEBUL University)
  • 발행 : 2003.11.13
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초록

The monolayer of oxygen atoms sandwitched between the adjacent nanocrystalline silicon layers was formed by ultra high vacuum-chemical vapor deposition (UHV-CVD). This multi-layer Si-O structure forms a new type of superlattice, semiconductor-atomic superattice (SAS). According to the experimental results, high-resolution cross-sectional transmission electron microscopy (HRTEM) shows epitaxial system. Also, the current-voltage (I-V) measurement results show the stable and good insulating behavior with high breakdown voltage. It is apparent that the system may form an epitaxially grown insulating layer as possible replacement of silicon-on-insulator (SOI), a scheme investigated as future generation of high efficient and high density CMOS on SOI.

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