한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
- /
- Pages.144-147
- /
- 2003
PEDCVD로 증착된 ILD용 저유전 상수 SiOCH 필름의 특성
Characterization of low-k dielectric SiOCH film deposited by PECVD for interlayer dielectric
- Choi, Yong-Ho (Myongji University) ;
- Kim, Jee-Gyun (Myongji University) ;
-
Lee, Heon-Yong
(Myongji University)
- 발행 : 2003.11.13
초록
Cu+ ions drift diffusion in formal oxide film and SiOCH film for interlayer dielectric is evaluated. The diffusion is investigated by measuring shift in the flatband voltage of capacitance/voltage measurements on Cu gate capacitors after bias temperature stressing. At a field of 0.2MV/cm and temperature