Grain distribution and electrical property according to grain size variation in polysilicon TFTs

다결정 실리콘 TFT소자의 채널길이 변화에 따른 grain의 분포와 전기적 특성

  • Lee, Eun-Nyung (Department of Information and Communication Engineering, m-PARC, Inha University) ;
  • Song, Ho-Young (Department of Information and Communication Engineering, m-PARC, Inha University) ;
  • Park, Se-Geun (Department of Information and Communication Engineering, m-PARC, Inha University) ;
  • Lee, Taek-Joo (Department of Information and Communication Engineering, m-PARC, Inha University) ;
  • O, Beom-Hoan (Department of Information and Communication Engineering, m-PARC, Inha University) ;
  • Lee, Seung-Gol (Department of Information and Communication Engineering, m-PARC, Inha University) ;
  • Lee, El-Hang (Department of Information and Communication Engineering, m-PARC, Inha University)
  • 이은녕 (인하대학교 정보통신공학과 m-PARC) ;
  • 송호영 (인하대학교 정보통신공학과 m-PARC) ;
  • 박세근 (인하대학교 정보통신공학과 m-PARC) ;
  • 이택주 (인하대학교 정보통신공학과 m-PARC) ;
  • 오범환 (인하대학교 정보통신공학과 m-PARC) ;
  • 이승걸 (인하대학교 정보통신공학과 m-PARC) ;
  • 이일항 (인하대학교 정보통신공학과 m-PARC)
  • Published : 2003.11.13

Abstract

The number of grain is determined based on Poisson distribution in respectively different active channel and it is converted to grain size which affects to the mobility and threshold voltage. the acquired data is applied to the SPICE for observing the variation of I-V characteristic with several channel lengths. we can confirm the effect on device.

Keywords