한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

실리콘 산화막에 대한 Ta-Mo 금속 게이트의 열적 안정성

Thermal Stability of Ta-Mo Alloy Metal on Silicon Oxide

  • 노영진 (한국항공대학교 전자공학과) ;
  • 이충근 (한국항공대학교 전자공학과) ;
  • 김재영 (한국항공대학교 전자공학과) ;
  • 홍신남 (한국항공대학교 전자공학과)
  • Noh, Young-Jin (Hankuk Aviation University, Department of Electronic Engineering) ;
  • Lee, Chung-Gun (Hankuk Aviation University, Department of Electronic Engineering) ;
  • Kim, Jae-Young (Hankuk Aviation University, Department of Electronic Engineering) ;
  • Hong, Shin-Nam (Hankuk Aviation University, Department of Electronic Engineering)
  • 발행 : 2003.11.13
PDF 다운로드
⟨ 이전 논문 다음 논문 ⟩

초록

This paper describes the interface stability of Ta-Mo alloy metal on $SiO_2$ Alloy was formed by co-sputtering method, and the alloy composition was varied by controlling Ta and Mo sputtering power. When the atomic composition of Ta was about 91%, the measured work function was 4.2eV that is suitable for NMOS gate. To identify interface stability between Ta-Mo alloy metal and $SiO_2$, C-V, FE-SEM(Field Emission-SEM), and XRD(X-ray diffraction) were performed on the samples annealed with rapid thermal processor between $600^{\circ}C$ and $900^{\circ}C$. Even after $900^{\circ}C$ rapid thermal annealing, excellent interface stability and electrical properties were observed. Also, thermodynamic analysis was studied to compare with experimental results.

키워드