한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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- Pages.908-912
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- 2003
비대칭 마그네트론 스퍼터링법으로 성장된 a-C:H 의 물리적 특성
Characteristics of Hydrogenated Amoruhous Carbon (a-C:H) Thin Films Grown by Close Field UnBalanced Magnetron Sputtering method
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Park, Yong-Seob
(School of Information and communication Engineering, Sungkyunkwan University) ;
- Myung, Hyun-Sik (Center for Advenced Plasma Surface Technology (CAPST), Sungkyunkwan University) ;
- Han, Jeon-Geon (Center for Advenced Plasma Surface Technology (CAPST), Sungkyunkwan University) ;
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Hong, Byung-You
(School of Information and communication Engineering, Sungkyunkwan University)
- 발행 : 2003.07.10
초록
비대칭 마그네트론 스퍼터링법을 사용하여 실리콘 기판위에 hydrogenated amorphous carbon (a-C:H) 박막을 성장시켰다. DC Power 와
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