금속 유기 분자 빔 에피택시로 성장시킨 $ZrO_2$ 박막의 특성과 공정변수가 박막 성장률에 미치는 영향

Characteristics and Processing Effects of $ZrO_2$ Thin Films grown by Metal-Organic Molecular Beam Epitaxy

[ $ZrO_2$ ] dielectric layers were grown on the p-type Si (100) substrate by metalorganic molecular beam epitaxy(MOMBE). Zrconium t-butoxide, $Zr(O{\cdot}t-C_4H_9)_4$ was used as a Zr precursor and Argon gas was used as a carrier gas. The thickness of the layers was measured by scanning electron microscopy (SEM) and the properties of the $ZrO_2$ layers were evaluated by X-ray diffraction, high frequency capacitance-voltage measurement. and HF C-V measurements have shown that $ZrO_2$ layer grown by MOMBE has a high dielectric constant (k=18-19). The growth rate is affected by various process variables such as substrate temperature, bubbler temperature, Ar, and $O_2$ gas flows.