한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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- Pages.304-307
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- 2003
Cu CMP 슬러리에서 화학첨가제 조건의 최적화
Optimization of Condition of Chemical Additives in Cu CMP Slurry
- Kim, In-Pyo (Chung-Ang Univ.) ;
- Kim, Nam-Hoon (Chung-Ang Univ.) ;
- Lim, Jong-Heun (Dong-Jin Semichem) ;
- Kim, Sang-Yong (Dongbu-Anam Semiconductor) ;
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Kim, Chang-Il
(Chung-Ang Univ.) ;
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Chang, Eui-Goo
(Chung-Ang Univ.)
- 발행 : 2003.07.10
초록
Replacement of aluminum by copper for interconnections in the semiconductor industry has raised a number of important issues. The integration of copper interconnection can be carried out by CMP(chemical mechanical polishing) is used to planarize the surface topography. In this experiments, we evaluated the optimization of several conditions for chemical additives during Cu CMP process. It was presented that the main cause of grown particle size is tartaric acid. The particle size was in inverse propotion to a quantity of bead and the time of milling process. The slurry stabilizer and oxidizer have been shown to have very good effect by addition in later milling process.