Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2003.07a
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- Pages.88-91
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- 2003
Improvement of Polishing Characteristics Using with and without Oxidant ($H_2O_2$ ) of Ti/FiN Layers
산화제($H_2O_2$ )의 첨가 유무에 따른 Ti/TiN막의 CMP 연마 특성
- Lee, Kyoung-Jin (Dep. Electrical and Electronic Eng. Daebul Uni.) ;
- Seo, Yong-Jin (Dep. Electrical and Electronic Eng. Daebul Uni.) ;
- Park, Chang-Jun (Dep. Electrical and Electronic Eng. Daebul Uni.) ;
- Kim, Gi-Uk (Dep. Electrical and Electronic Eng. Daebul Uni.) ;
- Park, Sung-Woo (Dep. Electrical and Electronic Eng. Daebul Uni.) ;
- Kim, Sang-Yong (FaD. DongbuAnam) ;
- Lee, Woo-Sun (Dep. Electrical Eng. Chosun Uni.)
- 이경진 (대불대학교 전기전자공학과) ;
- 서용진 (대불대학교 전기전자공학과) ;
- 박창준 (대불대학교 전기전자공학과) ;
- 김기욱 (대불대학교 전기전자공학과) ;
- 박성우 (대불대학교 전기전자공학과) ;
- 김상용 (동부아남 Fab.) ;
- 이우선 (조선대학교 전기공학과)
- Published : 2003.07.10
Abstract
Tungsten is widely used as a plug for the multi-level interconnection structures. However, due to the poor adhesive properties of tungsten (W) on