Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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Etching characteristics of BST thin films using $BCl_3/Cl_2$/Ar plasma

$BCl_3/Cl_2$/Ar 플라즈마를 이용한 BST 박막의 식각 특성

  • Kim, Gwan-Ha (School of Electrical and Electronics Engineering, Chung-Ang University) ;
  • Kim, Dong-Pyo (School of Electrical and Electronics Engineering, Chung-Ang University) ;
  • Kim, Chang-Il (School of Electrical and Electronics Engineering, Chung-Ang University) ;
  • Lee, Chul-In (Dept. of Electrical Engineering, Ansan College of Technology) ;
  • Kim, Tae-Hyung (Dept. of Electric System Designs, YeoJoe Institute of Technology)
  • 김관하 (중앙대학교 전자전기공학부) ;
  • 김동표 (중앙대학교 전자전기공학부) ;
  • 김창일 (중앙대학교 전자전기공학부) ;
  • 이철인 (안산공과대학 전기과) ;
  • 김태형 (여주대학 전기시스템디자인과)
  • Published : 2003.10.31
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Abstract

BST thin films were etched with inductively coupled plasmas. A chemically assisted physical etch of BST was experimentally confirmed by ICP under various gas mixtures. After a 20 % addition of $BCl_3$ to the $Cl_2/Ar$ mixture, resulting in an increased the chemical effect. As a increases of RF power, substrate power, and substrate temperature, and decrease of working pressure, the ion energy flux and chlorine atoms density increased. The maximum etch rate of the BST thin films was 90.1 nm/min at the RF power, substrate power, working pressure, and substrate temperature were 700 W, 300 W, 1.6 Pa, and 20 $^{\circ}C$, respectively. It was proposed that sputter etching is dominant etching mechanism while the contribution of chemical reaction is relatively low due to low volatility of etching product.

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