The study of phase-change with electric field on chalcogenide thin films

칼코게나이드 박막의 전기적 펄스에 의한 상변화 특성 연구

  • Yang, Sung-Jun (Department of Electronic Materials Eng. Kwangwoon Univ) ;
  • Shin, Kyung (Department of Electronic Materials Eng. Kwangwoon Univ) ;
  • Lee, Ki-Nam (Department of Electronic Materials Eng. Kwangwoon Univ) ;
  • Chung, Hong-Bay (Department of Electronic Materials Eng. Kwangwoon Univ)
  • 양성준 (광운대학교 전자재료공학과) ;
  • 신경 (광운대학교 전자재료공학과) ;
  • 이기남 (광운대학교 전자재료공학과) ;
  • 정홍배 (광운대학교 전자재료공학과)
  • Published : 2003.10.31

Abstract

We have been investigated phase-change with temperature and electric field in chalcogenide $Ge_2Sb_2Te_5$ thin film. $T_c$(crystallization temperature) is confirmed by measuring the resistance and conductivity with the varying temperature on the hotplate. We have measured I-V characteristics with $Ge_2Sb_2Te_5$ chalcogenide thin film. It is compared with I-V characteristics after impress the variable pulse. The pulse has variable height and duration that used voltage and current source.

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