$Ag_2Se$ 단결정의 전기적 특성

The Electrical Properties of $Ag_2Se$ Single Crystal

  • Kim, N.O. (Chosun College of Science & Technology) ;
  • Min, W.H. (Chosun College of Science & Technology) ;
  • Kim, B.C. (Chosun College of Science & Technology) ;
  • Chun, H.C. (Chosun College of Science & Technology) ;
  • Kim, H.G. (Chosun College of Science & Technology) ;
  • Shin, S.D. (Chosun College of Science & Technology) ;
  • Jang, S.N. (Chosun College of Science & Technology) ;
  • Lee, K.S. (Chosun College of Science & Technology)
  • 발행 : 2003.07.06

초록

The results of investigations of $Ag_2Se$ single crystal is presented. $Ag_2Se$ crystal was grown by the Bridgman method. The $Ag_2Se$ single crystal was an orthorhombic structure with lattice constance a=4.1686 $\AA$, b=9.0425 $\AA$, c=8.0065 $\AA$. Hall effect shows a n-type conductivity in the $Ag_2Se$ single crystal. The electrical resistivity values was $1.25{\times}10^3ohm^{-1}cm^{-1}$ and electron mobility was $-5.48{\times}10^3cm^2/V{\cdot}sec$ at room temperature(RT).

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