Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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Gate Leakage Current Characteristics of GaAs MESFETs with Different Temperature

GaAs MESFET의 온도변화에 대한 게이트누설전류 특성

  • Won, Chang-Sub (DEPT. of Electrical Information Control, Dong Seoul College) ;
  • Hong, Jea-Il (DEPT. of Electrical Information Control, Dong Seoul College)
  • 원창섭 (동서울대학 전기정보제어과) ;
  • 홍재일 (동서울대학 전기정보제어과)
  • Published : 2003.07.06
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Abstract

In this paper, We make experiment on two methode for GaAs MESFET with temperature variation. One method, we mesure gate leakage current at open source electrode. another we mesure gate leakage current at short source electrode. The difference of two current has been tested and provide that the existence of another source to Schottky barrier height against the image force lowering effect.

Keywords