한국광학회:학술대회논문집 (Proceedings of the Optical Society of Korea Conference)
- 한국광학회 2003년도 제14회 정기총회 및 03년 동계학술발표회
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- Pages.148-149
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- 2003
전류차단층의 기생효과 해석
Parasitic Effects due to Current Blocking Structure
초록
The parasitic effects due to the current blocking layer limit the bandwidth of the semiconductor laser diode. Thus, the parasitic response of various blocking layers was analyzed. The inin type was the best choice for the leakage current reduction and the bandwidth expansion.
키워드