Preparation of YBCO films on Ag substrates by MOCVD process

MOCVD공정에 의한 Ag 기판 위에 YBCO 박막의 증착

  • 김호진 (한국원자력연구소 원자력재료기술개발부) ;
  • 주진호 (성균관대학교 신소재공학) ;
  • 전병혁 (한국원자력연구소 원자력재료기술개발) ;
  • 김찬중 (한국원자력연구소 원자력재료기술개발부)
  • Published : 2003.10.01

Abstract

We prepared YBCO coated conductor by direct deposition of YBCO on Ag substrate by a MOCVD method. The Ag substrate was only prepared by cold rolling. The XRD data of the as-rolled Ag tape showed the formation of dominant (420) oriented grains. Processing variables were the oxygen partial pressure (Po$_2$) and deposition temperature (T$_{d}$). It was found that the a-axis oriented films were grown at lower T$_{d}$ below 80$0^{\circ}C$, while the c-axis oriented films were grown about 80$0^{\circ}C$. The surface of the films consisted of a second inclusion phase dispersed in the YBCO matrix. The Cu-rich phase regions were observed at the YBCO/Ag interface probably due to the inter-diffusion of Ag and Cu. Cu.

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