대한전자공학회:학술대회논문집 (Proceedings of the IEEK Conference)
- 대한전자공학회 2003년도 통신소사이어티 추계학술대회논문집
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- Pages.60-63
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- 2003
드레인 임피던스 변환회로를 이용한 광대역 FET 스위치 설계
Design of Broadband FET Switch Using Drain Impedance Transformation Network
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Choi, Won
(Dept. of Electronics Eng, University of Incheon) ;
- No, Hee-Jung (Dept. of Electronics Eng, University of Incheon) ;
- Oh, Chung-Kyun (Dept. of Electronics Eng, University of Incheon) ;
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Koo, Kyung-Heon
(Dept. of Electronics Eng, University of Incheon)
- 발행 : 2003.11.01
초록
This paper describes the design and the simulation of a V-band single pole double throw (SPDT) FET switch fur millimeter-wave applications using drain impedance transformation network with CPW transmission line. The designed switch has about 10% bandwidth at 60GHz. Insertion loss is better than 3dB fur the ON state and Isolation is larger than 30dB fer the OFF state. The maximum isolation is 43.4dB at 60GHz with input power of 10dBm. The yield analysis is done considering the effects of pHEMT variations.
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