대한전자공학회:학술대회논문집 (Proceedings of the IEEK Conference)
- 대한전자공학회 2003년도 하계종합학술대회 논문집 II
- /
- Pages.775-778
- /
- 2003
2차원 양자 역학적 모델링 및 시뮬레이션 : FinFET
2D(Dimension) Quantum Mechanical Modeling and Simulation : FinFET
초록
In this paper, we report our quantum mechanical approach for the analysis of FinFET in a self-consistent manner. The simulation results are carefully investigated for FinFET with an electrical channel length(Leff) of 30nm and with a fin thickness(Tsi) of 10~35nm. We also demonstrated the differences in the simulations for the classical and quantum-mechanical simulation approaches, respectively. These simulation results also imply that it is necessary to solve the coupled Poisson and Schrodinger equations in a self-consistent manner for analyzing the sub-30nm MOSFETS including FinFET.
키워드