대한전자공학회:학술대회논문집 (Proceedings of the IEEK Conference)
- 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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- Pages.743-746
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- 2003
Si 기판에서의 광소자 응용을 위한 Ge 박막의 Transfer 기술개발
Ge thin layer transfer on Si substrate for the photovoltaic applications
초록
We have successfully used hydrophobic direct-wafer bonding, along with H-induced layer splitting of Ge, to transfer 700nm think, single-crystal Ge films to Si substrates. Optical and electrical properties have been also observed on these samples. Triple-junction solar cell structures gown on these Ge/Si heterostructure templates show comparable photoluminescence intensity and minority carrier lifetime to a control structure grown on bulk Ge. When heavily doped p
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