Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Molecular Dynamics (MD) Simulation of Ultra-shallow Ion Implantation with a Modified Recoil Ion Approximation

  • Ohseob Kwon (Department of Electrical Engineering, School of Engineering, Inha University) ;
  • Kim, Kidong (Department of Electrical Engineering, School of Engineering, Inha University) ;
  • Jihyun Seo (Department of Electrical Engineering, School of Engineering, Inha University) ;
  • Taeyoung Won (Department of Electrical Engineering, School of Engineering, Inha University)
  • Published : 2003.07.01
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Abstract

In this paper, we report a molecular dynamics (MD) simulation of the ion implantation for nano-scale devices with ultra-shallow junctions. In order to model the profile of ion distribution in nanometer scale, the molecular dynamics with a damage model has been employed. As an exemplary case, we calculate the dopant profile during the ion implantation of B, As, and Ge.

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