Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)
- 2003.07b
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- Pages.719-722
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- 2003
Hot carrier induced device degradation for PD-SOI PMOSFET at elevated temperature
고온에서 PD-SOI PMOSFET의 소자열화
Abstract
This work investigates the device degradation p-channel PD SOI devices at various applied voltages as well as stress temperatures with respect to Body-Contact SOI (BC-SOI) and Floating-Body SOI (FB-SOI) MOSFETs. It is observed that the drain current degradation at the gate voltage of the maximum gate current is more significant in FB-SOI devices than in BC-SOI devices. For a stress at the gate voltage of the maximum gate current and elevated temperature, it is worth noting that the
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