Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)
- 2003.07b
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- Pages.667-670
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- 2003
Analysis of Dopant Dependency and Improvement of Thermal stability for Nano CMOS Technology
Nano-CMOS에서 NiSi의 Dopant 의존성 및 열 안정성 개선
Abstract
Ni-silicide has low thermal stabiliy. This point is obstacle to apply NiSi to devices. So In this paper, we have studied for obtain thermal stability and analysis of dopant dependency of NiSi. And then we applied Ni-silicide to devices. To improvement of thermal stability, we deposit Ni70/Co10/Ni30/TiN100 to sample. Co midlayer is enhanced thermal stability of NiSi. Co/Ni/TiN, this structure show very difference between n-poly and p-poly in sheet resistance. But Ni/Co/Ni/TiN, structure show less difference. Also junction leakage is good.
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