Ferromagnetic Heterostructures based on Semiconductors

  • Tanaka, M. (Department of Electronic Engineering, University of Tokyo) ;
  • Sugahara, S. (Department of Electronic Engineering, University of Tokyo) ;
  • Nazmul, A.M. (Department of Electronic Engineering, University of Tokyo)
  • Published : 2003.06.01

Abstract

Creating a new spin-based electronics (often called "spin-electronics" or "spintronics") is one of the hot topics in the current solid-state physics and electronics research. In order to utilize the spin degree of freedom in solids, particularly in semiconductors the current electronics is based on, we need to fabricate appropriate materials, understand and control the spin-dependent phenomena. In this ta1k, I will review the recent deve1opments of epitaxial ferromagnetic hetero structures based on semiconductors towards spintronics. This includes the semiconductor materials and hetero structures having high ferromagnetic transition temperature (III-V based alloy magnetic semiconductors, Mn-delta-doped magnetic semiconductors, and related heterostructures), spin-dependent transport and tunneling, and their device applications (tunneling magnetoresistance devices and three-terminal devices). Future issues and prospects will be also discussed.

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