한국재료학회:학술대회논문집 (Proceedings of the Materials Research Society of Korea Conference)
- 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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- Pages.165-165
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- 2003
이온주입된 Si(111)에 AlN 완충층을 이용하여 성장시킨 GaN 박막의 특성
The characteristics of AlN buffered GaN on ion implanted Si(111)
초록
The growth of GaN on Si is of great interest due to the several advantages low cost, large size and high-quality wafer availability as well as its matured technology. The crystal quality of GaN is known to be much influenced by the surface pretreatment of Si substrate [1]. In this work, the properties of GaN overlayer grown on ion implanted Si(111)and bare Si(111) have been investigated. Si(111) surface was treated ion implantation with 60KeV and dose 1
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