The dependence of porosity and crystallity on photoluminescence properties of Er doped $Al_2O_3/SiO_2$ films prepared by sol-gel method

졸-겔 방법으로 제조된 Er doped $Al_2O_3/SiO_2$ 필름의 다공성과 결정성에 대한 광 발광 특성

Optical amplificator have been used to compensate the losses in the optical signal transmission and processing. Today, there has been increasing demand for the very low cost optical amplifier. Sol-gel offers considerable potential both low cost manufacture, and for great flexibility in materials composition and structure. In addition, the sol-gel process is a very attractive method for producing porous materials with controlled structure. In this work, we present the potoluminescence properties of Er doped A1$_2$O$_3$/SiO$_2$ films. Erbium doped alumina nano sol was prepared by Al(NO$_3$)$_3$.9$H_2O$ and Er(NO$_3$)$_3$.5$H_2O$ through hydrolysis and peptization, and then GPS (3-Glycidoxypropyltrimethoxysilane) was added into Er doped alumina nano sol for organic- inorganic hybridization. Er doped A1$_2$O$_3$/SiO$_2$ film was obtained by spin coating, dip coating and thermal treatment from 30$0^{\circ}C$~120$0^{\circ}C$, and there were crack-free after thermal treatment. The thickness of film was measured SEM, and the porosity of film was characterized by BET and TGA. The crystal phase of Er doped A1$_2$O$_3$/SiO$_2$ were determined by XRD. Finally, the photoluminescence properties of Er doped A1$_2$O$_3$/SiO$_2$ films will be discuss with the consideration of porosity and crystallity.