한국재료학회:학술대회논문집 (Proceedings of the Materials Research Society of Korea Conference)

한국재료학회 (Materials Research Society of Korea)
권호 표지

SLS 성장방법에 의한 SiC 나노와이어의 성장

Growth of SiC nanowires by SLS growth mechanism

  • 노대호 (고려대학교 재료공학과) ;
  • 김재수 (한국과학기술연구원 금속공정연구센터) ;
  • 변동진 (고려대학교 재료공학과) ;
  • 진정근 (고려대학교 재료공학과) ;
  • 김나리 (고려대학교 재료공학과) ;
  • 양재웅 (대진대학교 신소재공학과)
  • 발행 : 2003.11.01
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초록

Most of all nano-structures, SiC had a high electrical conductivity and mechanical strengths ay high temperatures. So It was considered a useful materials for nanosized device materials and added materials for strength hardening. Much methods were developed for SiC nanowire and nanorods like CVD, carbothermal reduction, Laser ablation and CNT-confined reduction. These methods used the VLS (Vapor-Liquid-Solid) growth mechanism. In these experiments, SiC nanowire was grown by SLS (Sold-Liquid-Solid) growth mechanism used Graphite substrate, And we characterized its microstructure to compare with VLS growth mechanism.

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