Proceedings of the Materials Research Society of Korea Conference (한국재료학회:학술대회논문집)

Materials Research Society of Korea (한국재료학회)
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Growth of SiC nanowires by SLS growth mechanism

SLS 성장방법에 의한 SiC 나노와이어의 성장

  • 노대호 (고려대학교 재료공학과) ;
  • 김재수 (한국과학기술연구원 금속공정연구센터) ;
  • 변동진 (고려대학교 재료공학과) ;
  • 진정근 (고려대학교 재료공학과) ;
  • 김나리 (고려대학교 재료공학과) ;
  • 양재웅 (대진대학교 신소재공학과)
  • Published : 2003.11.01
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Abstract

Most of all nano-structures, SiC had a high electrical conductivity and mechanical strengths ay high temperatures. So It was considered a useful materials for nanosized device materials and added materials for strength hardening. Much methods were developed for SiC nanowire and nanorods like CVD, carbothermal reduction, Laser ablation and CNT-confined reduction. These methods used the VLS (Vapor-Liquid-Solid) growth mechanism. In these experiments, SiC nanowire was grown by SLS (Sold-Liquid-Solid) growth mechanism used Graphite substrate, And we characterized its microstructure to compare with VLS growth mechanism.

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