한국재료학회:학술대회논문집 (Proceedings of the Materials Research Society of Korea Conference)

한국재료학회 (Materials Research Society of Korea)
권호 표지

STI CMP용 나노 세리아 슬러리에서 연마입자의 결정특성에 따른 평탄화 효율의 의존성

Dependency of Planarization Efficiency on Crystal Characteristic of Abrasives in Nano Ceria Slurry for Shallow Trench Isolation Chemical Mechanical Polishing

  • Kang, Hyun-Goo (Nano-SOI Process Laboratory, Hanyang University) ;
  • Takeo Katoh (Nano-SOI Process Laboratory, Hanyang University) ;
  • Kim, Sung-Jun (Nano-SOI Process Laboratory, Hanyang University) ;
  • Ungyu Paik (Department of Ceramic Engineering, Hanyang University) ;
  • Park, Jea-Gun (Nano-SOI Process Laboratory, Hanyang University)
  • 발행 : 2003.11.01
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초록

Chemical mechanical polishing (CMP) is one of the most important processes in recent ULSI (Ultra Large Scale Integrated Circuit) manufacturing technology. Recently, ceria slurries with surfactant have recently been used in STI-CMP,[1] became they have high oxide-to-nitride removal selectivity and widen the processing margin The role of the abrasives, however, on the effect of planarization on STI-CMP is not yet clear. In this study, we investigated how the crystal characteristic affects the planarization efficiency of wafer surface with controlling crystallite size and poly crystalline abrasive size independently.

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