Growth of high-$T_{c}$ Superconducting Multilayer thin films and Fabrication of Microwave Filter

고온초전도 다층박막의 성장과 마이크로파 필터의 개발

  • 강광용 (한국전자통신연구원 반도체·원천기술연구소) ;
  • 김철수 (한국전자통신연구원 반도체·원천기술연구소) ;
  • 곽민환 (한국전자통신연구원 반도체·원천기술연구소)
  • Published : 2003.02.01

Abstract

For microwave device applications, c-axis oriented high temperature superconducting YBa$_2$Cu$_3$O$_{7-{\delta}}$ (HTS-YBCO) epitaxial thin films on the r-cut sapphire substrate(Al$_2$O$_3$) were prepared. In order to reduce the lattice mismatch with a substrate and to enhance the crystallity of HTS thin films, CeO$_2$ buffer layer on the r-cut sapphire substrate was grown by the RF-magnetron sputtering. The YBCO films on the CeO$_2$ buffer layer were deposited using the pulsed-laser deposition (PLD) method. These HTS YBCO /CeO$_2$/Al$_2$O$_3$ multilayer thin films(30 $\times$ 30 mm$^2$) routinely exhibited a critical temperature(T$_{c}$) of 89 K from the R-T measurement. Using HTS YBCO/CeO$_2$ /Al$_2$O$_3$ multilayer thin film. We fabricated and characterized the microwave passive devices (planar type filters) with cryopack-age such as the coupled -line type low-pass filter (LPF) and the open-loop meander type bandpass filter (BPF).filter (BPF).).

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