PACVD of Plasma Polymerized Organic Thin Films and Comparison of their Electrochemical Properties

  • I.S. Bae (Institute of Basic Science and Department of Chemistry, Sungkyunkwan University) ;
  • S.H. Cho (Institute of Basic Science and Department of Chemistry, Sungkyunkwan University) ;
  • Kim, M.C. (Institute of Basic Science and Department of Chemistry, Sungkyunkwan University) ;
  • Y.H. Roh (School of Electrical and Computer Engineering, Sungkyunkwan University) ;
  • J.H. Boo (Institute of Basic Science and Department of Chemistry, Sungkyunkwan University)
  • 발행 : 2003.05.01

초록

Plasma polymerized organic thin films were deposited on Si(100) glass and metal substrates using thiophene and ethylcyclohexane precursors by PECVD method. In order to compare electrochemical properties of the as-grown thin films, the effects of the RF plasma power in the range of 30~100 W. AFM showed that the polymer films with smooth surface and sharp interface could be grown under various deposition conditions. Impedance analyzer was utilized for the determination of I-V curve for leakage current density and C-V for dielectric constants, respectively. To obtain C-V curve, we used a MIM structure of metal(Al)-insulator(plasma polymerized thin film)-metal(Pt) structure. Al as the electrode was evaporated on the thiophene films that grew on Pt coated silicon substrates, and the dielectric constants of the as-grown films were then calculated from C- V data measured at 1MHz. From the electrical property measurements such as I-V and C-V characteristics, the minimum dielectric constant and the best leakage current of thiophene thin films were obtained to be about 3.22 and $1{\;}{\times}10^{-11}{\;}A/cm^2$. However, in case of ethylcyclohexane thin films, the minimum dielectric constant and the best leakage current were obtained to be about 3.11 and $5{\;}{\times}10^{-12}{\;}A/cm^2$.

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