Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)
- 1998.06a
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- Pages.867-870
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- 1998
A study hot-carrier degradation on submicron devices
Submicron device에서의 hot-carrier 열화에 관한 연구
Abstract
In this paper we simulated 0.30um NMOS transitor to analysis hot carrier degradation depend on As, As+P, P LDD structure. As a result we obtained As+P LDD structure was good hot carrier immunity. Also we find that hog carrier life time improved a sincresing P dose due to P dose helps in grading the nLDD junction. However As-only junction was poor due to junction high peak position located near the surface.
Keywords