Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Optimizations for oxide CMP processes

Oxide CMP 공정의 최적화에 관한 연구

  • 김동일 (동국대학교 전자공학과 반도체 및 집적회로 연구실) ;
  • 허종곤 (동국대학교 전자공학과 반도체 및 집적회로 연구실) ;
  • 윤각기 (동국대학교 전자공학과 반도체 및 집적회로 연구실) ;
  • 이종구 (동국대학교 전자공학과 반도체 및 집적회로 연구실)
  • Published : 1998.06.01
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Abstract

In this study, oxide(TEOS) CMPs were carried out for various head pressures. Table and head speeds are fixed at 25 RPM. Head pressures are 5, 7.5, 10, 12.5 PSI, and under these conditions, 1,587, 1,631, 2,556, 2,871.agns./min of oxide (TEOS) removal rates and 14.7, 18.5, 9.52, 7.9% of uniformities are obtained, respectively. Also, these experiments for local and global planarizations were done using the patterned 4" wafers. These conditions are applicable to STI(shallow trench isolation) structures and planarizations for sub-half micron lithography.aphy.

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