Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)
- 1998.06a
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- Pages.481-484
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- 1998
Optimizations for oxide CMP processes
Oxide CMP 공정의 최적화에 관한 연구
Abstract
In this study, oxide(TEOS) CMPs were carried out for various head pressures. Table and head speeds are fixed at 25 RPM. Head pressures are 5, 7.5, 10, 12.5 PSI, and under these conditions, 1,587, 1,631, 2,556, 2,871.agns./min of oxide (TEOS) removal rates and 14.7, 18.5, 9.52, 7.9% of uniformities are obtained, respectively. Also, these experiments for local and global planarizations were done using the patterned 4" wafers. These conditions are applicable to STI(shallow trench isolation) structures and planarizations for sub-half micron lithography.aphy.
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