대한전자공학회:학술대회논문집 (Proceedings of the IEEK Conference)
- 대한전자공학회 1998년도 하계종합학술대회논문집
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- Pages.465-468
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- 1998
도핑농도의 선택도를 이용한 국부적 다공질 실리콘의 형성
Localized formation of porous silicon usin gdoping concentration selectivity
초록
For porous silicon layer to be used as active layer in various devices, it is necessary to be formed locally along with a designed pattern on the wafer. However, there is still no suitable masking layer to withstand against the high concentration of HF for a time of some minutes up to some hours during the anodic process effectively. In this work, we investigated the property of selectivity between p
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